Reasons for failure of IGBT
Failure of IGBT (Insulated Gate Bipolar Transistor) happens due to overcurrent conditions causing thermal stress, overheating, or voltage spikes leading to the breakdown of the semiconductor junctions. IGBT modules are power semiconductor devices used for switching high voltage and high current loads in various applications, such as motor drives, renewable energy systems, industrial automation, and traction systems in transportation. An IGBT module is a compact and integrated solution for power switching, combining multiple IGBTs, diodes, and necessary protection and control circuitry in a single package. These modules play a vital role in various industries and applications where efficient and precise control of high-power electrical current is required. Some common usages of IGBT modules include motor control applications, solar inverters, wind turbines, robotics, power supply, welding equipment, UPS systems and onboard charging systems for electric vehicles (EVs).
Failure of IGBT
Gate overvoltage
Corrosion
Collector emitter overvoltage
Thermal faults
Manufacturing defects
Over current
Various industries use IGBT modules because of their high power handling capability, efficient switching characteristics, and versatility.
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